 Recommended PC2100 (DDR 266) Memory Modules
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Bank |
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Vendor Part Number
(Chip Part Number) |
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Apacer |
128 |
<Note 1> |
DDR RAM
(reg./ECC) |
Samsung |
77.10312.460
(K4H280838C-TCB0) |
256 |
<Note 1> |
DDR RAM
(reg./ECC) |
Infineon |
77.10609.112
(HYB25D256800AT-7A) |
256 |
<Note 1> |
DDR RAM
(reg./ECC) |
Samsung |
AM256LD43R266
(K4H280838C-TCB0) |
512 |
<Note 1> |
DDR RAM
(reg./ECC) |
Nanya |
77.10709.542
(NT5DS32M8AT-7K) |
512 |
<Note 1> |
DDR RAM
(reg./ECC) |
Infineon |
77.10709.110
(HYB25D256800AT-7A) |
512 |
<Note 1> |
DDR RAM
(reg./ECC) |
Samsung |
AM512LD53R266
(K4H560838C-TCB0) |
512 |
<Note 1> |
DDR RAM |
Samsung |
77.10704.460
(K4H560838C-TCB0)
AM512LD53U26604 |
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AG16L72A8S4B0S
(K4H280838B-TCB0) |
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128 |
<Note 1> |
DDR RAM
(reg./ECC) |
Samsung |
AB16L72A8SEB0S
(K4H280838B-TCB0) |
256 |
<Note 1> |
DDR RAM |
Samsung |
AG32L64T8SQB0S
(K4H560838D-TCB0) |
512 |
<Note 1> |
DDR RAM |
Samsung |
AG64L64T8SQB0S
(K4H560838D-TCB0) |
1 GB |
<Note 1> |
DDR RAM
(ECC) |
Samsung |
AG28L64T8SMB0S
(K4H560438D-TCB0) |
Corsair |
256 |
<Note 1> |
DDR RAM |
MT |
CM64SD256-2100
(46V16M8 TG-75B) |
512 |
<Note 1> |
DDR RAM |
Samsung |
CM64SD512-2100
(K4H560838C-TCB0) |
Gigaram |
1 GB
1.15" |
<Note 1> |
DDR RAM |
Samsung |
MGR73000-1GB/266/SAM
(K4H560438D-TCB0) |
Micro |
128 |
<Note 1> |
DDR RAM |
Micro |
BZAAW4F001 200031
(MT46V8M8) |
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BZABACC002 200139
(MT46V16M8) |
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Nanya |
512 |
<Note 1> |
DDR RAM
(reg./ECC) |
Nanya |
0205.A0684
(NT5DS64M4AT-7K) |
512 |
<Note 1> |
DDR RAM |
Nanya |
0235.K973820ES
(NT5DS32M8BT-75B) |
Unigen |
512 |
<Note 1> |
DDR RAM
(reg./ECC) |
MT |
UG764D7584KM-DZ
(46V64M4TG-75C) |
Viking |
128 |
<Note 1> |
DDR RAM
(reg./ECC) |
Nanya |
DDR16X72RPC2100-9
(0040 NT5DS16M8AT-7K) |
Special Note
- TYAN recommend a maximum of 6 banks (loads) be used at one time.
- PC2700 maximum to 2 DIMM support only.
- PC3200 maximum to 1 DIMM (DIMM 3) support only.
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